Gallium nitride transistors and integrated circuits will be produced in Türkiye for the first time.
ASELSAN and Bilkent University established ASELSAN Bilkent Micro Nano Technologies Industry and Trade Inc. (AB-MikroNano) to produce high-power nanotransistors.
Nanotransistor technology based on Gallium Nitride (GaN) semiconductor material, supported by TÜBİTAK and the Undersecretariat of Defense Industry (SSM), has been developed domestically by ASELSAN and BİLKENT. High-performance GaN-based transistors were produced at the Bilkent University Nanotechnology Research Center (NANOTAM). These products were found to be able to operate at high speeds and high power levels.
The transistors, which completed laboratory tests, were also successfully used in field tests conducted at ASELSAN. As a result of the performance exceeding the targeted levels obtained from the produced transistors, the managements of ASELSAN and BİLKENT decided to invest in and establish a joint company for the production of nanotechnology-based transistors and integrated circuits in Türkiye.
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